主要科研成果-Achievement | 第一作者: 1.Zhang G, Yang H, He L, et al. Importance of domain purity in semi‐conducting polymer/insulating polymer blends transistors [J]. Journal of Polymer Science Part B Polymer Physics, 2016, 54(17):1760-1766. 2.Zhang G, Zhang P, Hu D, et al. A Postalignment Method for High-Mobility Organic Thin-Film Transistors [J]. IEEE Transactions on Electron Devices, 2018, PP(99):1-6. 3.Zhang G, Zhang P, Chen H, et al. Modification of polymer gate dielectrics for organic thin-film transistor from inkjet printing [J]. Applied Physics A, 2018, 124(7): 481. 4.张国成等. 绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响 [J]. 发光学报, 2017, 38(2):194-200. 5.张国成等. 绝缘修饰层及其厚度对喷墨打印 OTFT 的影响 [J]. 福建工程学院学报, 2016, 14(6):597-602. 6.张国成等. 一种用于视频采集 10bit 低功耗 SARADC 的设计 [J]. 中国集成电路, 2014, 23(z1):41-44. 非第一作者: 1.Wu X, Lan S, Zhang G, et al. Morphology of a Ternary Blend Solar Cell Based on Small Molecule:Conjugated Polymer:Fullerene Fabricated by Blade Coating [J]. Advanced Functional Materials, 2017, 27(40):1703268. 2.Lan S, Yang H, Zhang G, et al. The Importance of Solvent Removal Rate on the Morphology and Device Performance of Organic Photovoltaics with Solvent Annealing [J]. Acs Appl Mater Interfaces, 2017, 9(24):20679-20685. 3.Yang H, Chen C, Zhang G, et al. Solution Processed Organic Thin Film Transistor Arrays with Assistance of Laser Ablation [J]. Acs Applied Materials & Interfaces, 2017, 9(4):3849-3856. 4.Chen C, Chen G, Yang H, et al. Solution-processed metal oxide arrays with femtosecond laser ablation and annealing for thin-film transistors [J]. Journal of Materials Chemistry C, 2017, 5(36). 5.Hu D, Zhang G, Yang H, et al. High-Performance Nonvolatile Organic Transistor Memory Using Quantum Dots-Based Floating Gate [J]. IEEE Transactions on Electron Devices, 2017, PP(99):1-6. 6.Lan S, Yang H, Zhang G, et al. Impact of Fullerene Structure on Nanoscale Morphology and Miscibility and Correlation of Performance on Small Molecules: Fullerene Solar Cell [J]. The Journal of Physical Chemistry C, 2016, 120(38): 21317-21324. 授权发明专利: 1.一种有机薄膜晶体管及提高有机薄膜晶体管迁移率的方法(授权),陈惠鹏,张国成,杨辉煌等 | |